Presentation Title

MOSFET Properties at High Temperatures

Start Date

November 2016

End Date

November 2016

Location

HUB 302-109

Type of Presentation

Poster

Abstract

The purpose of this research is to gain familiarity with different characteristics of Metal-Oxide -Semiconductor Field-Effect Transistors (MOSFETs), and determine if the MOSFET models adhere to industry standards under conditions of high voltage and high temperatures. MOSFETs are versatile components used in a wide range of electronic devices. Capacitance, voltage breakdown, threshold voltage, and current were tested. The experiment for drain-source current has two parameters. The first is the controlled voltage which has a range between 0 Volts and 20 Volts. The second is the set voltage which has a range between 0 Volts and 10 Volts. The MOSFET is hooked up to an auxiliary circuit designed for testing drain-source current. The circuit is then connected to a power supply and an oscilloscope. The power supply is kept at the set voltage, and the controlled voltage can be altered on the oscilloscope. The drain-source current is then recorded. The next stage of experimentation is testing drain-source voltage. For this test there are two parameters. The first is set current which ranges from 40 Amperes to 85 Amperes. The second is temperature which is varied from 25 to 175 degrees Celsius. The MOSFET is placed on a heated metal platform where an infrared thermometer is used to determine the temperature of the MOSFET. When the desired temperature is met, the drain-source voltage is measured. Based on the data, we found that the MOSFETs are dependent on temperature and voltage. In the first experiment, the drain-source current increased as the voltage is varied. The second experiment showed that temperature and voltage varied proportionally. Because the MOSFETs tested are to be used in industry, it is necessary to confirm that the MOSFETs correspond to the industry standards. This research has provided insight to MOSFETs and practical uses in research and the industry.

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Nov 12th, 1:00 PM Nov 12th, 2:00 PM

MOSFET Properties at High Temperatures

HUB 302-109

The purpose of this research is to gain familiarity with different characteristics of Metal-Oxide -Semiconductor Field-Effect Transistors (MOSFETs), and determine if the MOSFET models adhere to industry standards under conditions of high voltage and high temperatures. MOSFETs are versatile components used in a wide range of electronic devices. Capacitance, voltage breakdown, threshold voltage, and current were tested. The experiment for drain-source current has two parameters. The first is the controlled voltage which has a range between 0 Volts and 20 Volts. The second is the set voltage which has a range between 0 Volts and 10 Volts. The MOSFET is hooked up to an auxiliary circuit designed for testing drain-source current. The circuit is then connected to a power supply and an oscilloscope. The power supply is kept at the set voltage, and the controlled voltage can be altered on the oscilloscope. The drain-source current is then recorded. The next stage of experimentation is testing drain-source voltage. For this test there are two parameters. The first is set current which ranges from 40 Amperes to 85 Amperes. The second is temperature which is varied from 25 to 175 degrees Celsius. The MOSFET is placed on a heated metal platform where an infrared thermometer is used to determine the temperature of the MOSFET. When the desired temperature is met, the drain-source voltage is measured. Based on the data, we found that the MOSFETs are dependent on temperature and voltage. In the first experiment, the drain-source current increased as the voltage is varied. The second experiment showed that temperature and voltage varied proportionally. Because the MOSFETs tested are to be used in industry, it is necessary to confirm that the MOSFETs correspond to the industry standards. This research has provided insight to MOSFETs and practical uses in research and the industry.