Presentation Title

Optoelectrical Characterization of MoS2

Start Date

November 2016

End Date

November 2016

Location

HUB 302-#179

Type of Presentation

Poster

Abstract

Since the discovery of graphene, 2D materials have been extensively researched. Unlike graphene, transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS­2), exhibit a direct bandgap at the monolayer limit. This makes them ideal for optoelectronic devices. We utilize chemical vapor deposition (CVD) for the growth of monolayer MoS2, which we characterize by scanning photocurrent microscopy (SPCM). By optically exciting the MoS2 devices, we study the photoconductive nature of the material. Preliminary results show that photocurrent is localized near the contacts, showing that these contact-material interfaces play a large role in these 2D materials. Keywords: TMDs, 2D Materials, CVD, SPCM, Photocurrent

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Nov 12th, 4:00 PM Nov 12th, 5:00 PM

Optoelectrical Characterization of MoS2

HUB 302-#179

Since the discovery of graphene, 2D materials have been extensively researched. Unlike graphene, transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS­2), exhibit a direct bandgap at the monolayer limit. This makes them ideal for optoelectronic devices. We utilize chemical vapor deposition (CVD) for the growth of monolayer MoS2, which we characterize by scanning photocurrent microscopy (SPCM). By optically exciting the MoS2 devices, we study the photoconductive nature of the material. Preliminary results show that photocurrent is localized near the contacts, showing that these contact-material interfaces play a large role in these 2D materials. Keywords: TMDs, 2D Materials, CVD, SPCM, Photocurrent