Presentation Title

Optimizing Growth of 2-Dimensional Molybdenum Disulfide via Chemical Vapor Deposition

Faculty Mentor

Ludwig Bartels

Start Date

17-11-2018 8:30 AM

End Date

17-11-2018 10:30 AM

Location

HARBESON 58

Session

POSTER 1

Type of Presentation

Poster

Subject Area

engineering_computer_science

Abstract

Transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), have been gaining attention for their potential optical and photonic properties. As a monolayer material, TMDs posses higher photoresponse due to its direct band gap. 2-dimensional TMDs could be the next generation material for various electronic applications. Molecular-beam epitaxy (MBE) is one technique to grow high purity and very precise thin TMD films, but it requires ultra-high vacuum environment and slow deposition rate, in addition, it is very expensive. Alternatively, chemical vapor deposition (CVD) provides uniform and high purity growth of 2D thin films, and is cost efficient for scale up productions. Growth of high surface area single-atomic-layer TMD films remain a great challenge. Our research looks at formulating a systematic procedure for optimizing the production of TMD films via CVD growth. The material and chemical properties in these thin films are characterized using Raman and photoluminescence (PL) spectroscopy. Furthermore, we make devices on these thin films in order to measure the electrical properties. Our goal with these measurements and characterization is to optimize synthesis of large size single-atomic-layer MoS2 with high surface area as is required for industry scale device fabrication.

KEYWORDS: transition metal dichalcogenides, chemical vapor deposition, material science, Van der Waals material, Raman spectroscopy, thin films

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Nov 17th, 8:30 AM Nov 17th, 10:30 AM

Optimizing Growth of 2-Dimensional Molybdenum Disulfide via Chemical Vapor Deposition

HARBESON 58

Transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), have been gaining attention for their potential optical and photonic properties. As a monolayer material, TMDs posses higher photoresponse due to its direct band gap. 2-dimensional TMDs could be the next generation material for various electronic applications. Molecular-beam epitaxy (MBE) is one technique to grow high purity and very precise thin TMD films, but it requires ultra-high vacuum environment and slow deposition rate, in addition, it is very expensive. Alternatively, chemical vapor deposition (CVD) provides uniform and high purity growth of 2D thin films, and is cost efficient for scale up productions. Growth of high surface area single-atomic-layer TMD films remain a great challenge. Our research looks at formulating a systematic procedure for optimizing the production of TMD films via CVD growth. The material and chemical properties in these thin films are characterized using Raman and photoluminescence (PL) spectroscopy. Furthermore, we make devices on these thin films in order to measure the electrical properties. Our goal with these measurements and characterization is to optimize synthesis of large size single-atomic-layer MoS2 with high surface area as is required for industry scale device fabrication.

KEYWORDS: transition metal dichalcogenides, chemical vapor deposition, material science, Van der Waals material, Raman spectroscopy, thin films