Presentation Title

Semiconductor WSe2 Vertical Devices on Pre-Patterned SiO2 Substrates

Faculty Mentor

Ludwig Bartels

Start Date

17-11-2018 12:30 PM

End Date

17-11-2018 2:30 PM

Location

CREVELING 119

Session

POSTER 2

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) have attracted interest because they provide the desirable mechanical properties of graphene and also exhibit direct-bandgap semiconducting properties at the monolayer limit. The presence of a direct band-gap in a monolayer of tungsten diselenide (WSe2), coupled with strong photoluminescence has shown promise for optoelectronics and spintronics. Through chemical vapor deposition (CVD) we synthesize WSe2 onto pre-patterned silicon dioxide (SiO2). Optical characterization methods such as Raman and Photoluminescence spectroscopy was used to verify the growth of single-layer WSe2. This synthesis method yields single domain islands and homogenous films, on the micron scale. The use of etched wells allows for the transistor channel-length to be defined independent of the lithographic lateral resolution. This research folds fundamental significance to the further development of nanoelectronics and optoelectronics.

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Nov 17th, 12:30 PM Nov 17th, 2:30 PM

Semiconductor WSe2 Vertical Devices on Pre-Patterned SiO2 Substrates

CREVELING 119

Two-dimensional transition metal dichalcogenides (TMDs) have attracted interest because they provide the desirable mechanical properties of graphene and also exhibit direct-bandgap semiconducting properties at the monolayer limit. The presence of a direct band-gap in a monolayer of tungsten diselenide (WSe2), coupled with strong photoluminescence has shown promise for optoelectronics and spintronics. Through chemical vapor deposition (CVD) we synthesize WSe2 onto pre-patterned silicon dioxide (SiO2). Optical characterization methods such as Raman and Photoluminescence spectroscopy was used to verify the growth of single-layer WSe2. This synthesis method yields single domain islands and homogenous films, on the micron scale. The use of etched wells allows for the transistor channel-length to be defined independent of the lithographic lateral resolution. This research folds fundamental significance to the further development of nanoelectronics and optoelectronics.