Presentation Title

Fabrication of Dual Gated Twisted Bilayer Graphene Heterostructures

Faculty Mentor

Dr. David Goldhaber-Gordon

Start Date

17-11-2018 12:30 PM

End Date

17-11-2018 2:30 PM

Location

CREVELING 38

Session

POSTER 2

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

Twisted bilayer graphene (TBG) has recently been shown to have emergent phenomena not present in either monolayer or bernal stacked bilayer graphene. Given two sheets of graphene stacked at the ‘magic’ angle, flat bands arise near charge neutrality which show correlated insulating states at half-filling (Cao, 2018). In order to precisely control the relative angle between the sheets of graphene, the TBG heterostructures are constructed by using the rip and stack method in which an exfoliated flake of hexagonal boron nitride (hBN) is used to tear a sheet of graphene in half. The original sheet of graphene is then controllably rotated and the removed portion is stacked on top. In this study we focused on targeting twist angles of 1.17 degrees, near the magic angle. Previous studies on TBG heterostructures have focused on singly gated devices. Our work focuses on making devices with a top and back gate to enable us to apply a perpendicular electric field and study new outcomes as a function of the carrier density and displacement field.

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Nov 17th, 12:30 PM Nov 17th, 2:30 PM

Fabrication of Dual Gated Twisted Bilayer Graphene Heterostructures

CREVELING 38

Twisted bilayer graphene (TBG) has recently been shown to have emergent phenomena not present in either monolayer or bernal stacked bilayer graphene. Given two sheets of graphene stacked at the ‘magic’ angle, flat bands arise near charge neutrality which show correlated insulating states at half-filling (Cao, 2018). In order to precisely control the relative angle between the sheets of graphene, the TBG heterostructures are constructed by using the rip and stack method in which an exfoliated flake of hexagonal boron nitride (hBN) is used to tear a sheet of graphene in half. The original sheet of graphene is then controllably rotated and the removed portion is stacked on top. In this study we focused on targeting twist angles of 1.17 degrees, near the magic angle. Previous studies on TBG heterostructures have focused on singly gated devices. Our work focuses on making devices with a top and back gate to enable us to apply a perpendicular electric field and study new outcomes as a function of the carrier density and displacement field.