Presentation Title

Room Temperature Resitance Measurements on Ion Gel Gated SISTO Thin Films

Faculty Mentor

Jian Liu

Start Date

17-11-2018 12:30 PM

End Date

17-11-2018 2:30 PM

Location

CREVELING 40

Session

POSTER 2

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

Insulating thin films of layered SrIrO3/SrTiO3 (SISTO) have been chosen as a candidate system in which to explore field effect resistance switching, where the application of an electric field induces a reversible change in the electrical resistance. This allows for the possibility of creating a new field effect transistor (FET). The SISTO films were synthesized via pulsed laser deposition. The resistance was measured at room temperature using the 4-wire method. The field effect gate was created by placing an ion gel droplet on the film covered by a sheet of Pt foil. Preliminary data demonstrates the change of electrical resistance of the film upon application of voltage across the ion gel. Future work will include improving the experimental setup to reduce the likely temperature-dependent drift in the resistance measurements and investigating the effects of altering the voltage.

Summary of research results to be presented

Preliminary data demonstrates the change of electrical resistance of the thin film upon application of voltage across the ion gel.

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Nov 17th, 12:30 PM Nov 17th, 2:30 PM

Room Temperature Resitance Measurements on Ion Gel Gated SISTO Thin Films

CREVELING 40

Insulating thin films of layered SrIrO3/SrTiO3 (SISTO) have been chosen as a candidate system in which to explore field effect resistance switching, where the application of an electric field induces a reversible change in the electrical resistance. This allows for the possibility of creating a new field effect transistor (FET). The SISTO films were synthesized via pulsed laser deposition. The resistance was measured at room temperature using the 4-wire method. The field effect gate was created by placing an ion gel droplet on the film covered by a sheet of Pt foil. Preliminary data demonstrates the change of electrical resistance of the film upon application of voltage across the ion gel. Future work will include improving the experimental setup to reduce the likely temperature-dependent drift in the resistance measurements and investigating the effects of altering the voltage.