Presentation Title

Microwave Induced Hydrothermal Single-layer Etching of SrTiO3 (100)

Faculty Mentor

Sara Callori

Start Date

17-11-2018 12:30 PM

End Date

17-11-2018 2:30 PM

Location

CREVELING 42

Session

POSTER 2

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

Microwave Induced Hydrothermal Single-layer Etching of SrTiO3 (100)

Andres Hernandez, Luis Martinez, California State University, San Bernardino, CA

The production of a high-quality thin film relies heavily on its substrate; an atomically flat surface will result in a smooth film. Through hydrothermal etching of Strontium Titanate (SrTiO3) utilizing microwave radiation in deionized water we are to able produce a single-terminated and atomically flat substrates without the need of the Hydrofluoric acid, which can result in Fluorine contamination of the TiO2top layers. We confirmed this through measurement of the one unit-cell, 3.9 Å,step height and roughness via atomic force microscopy. The process requires 3 minutes of microwave radiation and provides a safe, simple, and environmentally neutral procedure for substrate etching and has potential to replace the current standard for substrate etching with HF acid.

Funder Acknowledgments: We would like to thank Jonas Etzweilier, Ashraf Dries, Taylor Dixon and Gabe Almeda for their assistance in the lab. I thank Dr. Callori, Dr. Dixon and Dr. Usher for their guidance and help as well. Funding provided by NSF CREST Grant #1345163

Faculty Advisor/Mentor: Dr. Sara Callori, sara.callori@csusb.edu

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Nov 17th, 12:30 PM Nov 17th, 2:30 PM

Microwave Induced Hydrothermal Single-layer Etching of SrTiO3 (100)

CREVELING 42

Microwave Induced Hydrothermal Single-layer Etching of SrTiO3 (100)

Andres Hernandez, Luis Martinez, California State University, San Bernardino, CA

The production of a high-quality thin film relies heavily on its substrate; an atomically flat surface will result in a smooth film. Through hydrothermal etching of Strontium Titanate (SrTiO3) utilizing microwave radiation in deionized water we are to able produce a single-terminated and atomically flat substrates without the need of the Hydrofluoric acid, which can result in Fluorine contamination of the TiO2top layers. We confirmed this through measurement of the one unit-cell, 3.9 Å,step height and roughness via atomic force microscopy. The process requires 3 minutes of microwave radiation and provides a safe, simple, and environmentally neutral procedure for substrate etching and has potential to replace the current standard for substrate etching with HF acid.

Funder Acknowledgments: We would like to thank Jonas Etzweilier, Ashraf Dries, Taylor Dixon and Gabe Almeda for their assistance in the lab. I thank Dr. Callori, Dr. Dixon and Dr. Usher for their guidance and help as well. Funding provided by NSF CREST Grant #1345163

Faculty Advisor/Mentor: Dr. Sara Callori, sara.callori@csusb.edu