Presentation Title

2D WSe2 Synthesis and Characterization on Patterned Substrates

Faculty Mentor

Ludwig Bartels

Start Date

18-11-2017 2:00 PM

End Date

18-11-2017 2:15 PM

Location

9-247

Session

Engineering/CS 3

Type of Presentation

Oral Talk

Subject Area

engineering_computer_science

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) are of interest due to their unique optical and electronic characteristics in the single layer. In order to optimize the electrical properties of these materials, a method to overcome a substantial Schottky-barrier in these single layer materials must be utilized, while maintaining their 2D optical properties. One such method to do so is by creating contacts of multilayer TMD materials with a 2D channel. Such an architecture can be achieved via chemical vapor deposition (CVD) growth over lithographically-patterned substrates. My work investigates the growth of WSe2, a native p-type material, over patterned SiO2 of different arrangements as to tune the channel length between WSe2 monolayer islands. Using the substrate as a template removes the need for post-growth modification of the material, allowing for optimal preservation of the naturally grown film characteristics. These films are then characterized with a variety of optical techniques, such as Raman and photoluminescence spectroscopy, as well as electrical transport measurements.

Summary of research results to be presented

TMDs are optimal in the 2D state for their optoelectronic properties. However, at the 2D state, Schottky-barriers become a large problem needed to overcome. It was possible to overcome this barrier through a variety of methods such as the use of graphene or side contacts. This research shows the incorporation of 3D contacts and 2D channels in order to have a successfully reduced Schottky-barrier while maintaining 2D properties. Verifying the optical properties of the single layer material while simultaneously verifying the current through device fabrication confirms the possibility to overcome the Schottky-barrier in the single layer.

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Nov 18th, 2:00 PM Nov 18th, 2:15 PM

2D WSe2 Synthesis and Characterization on Patterned Substrates

9-247

Two-dimensional transition metal dichalcogenides (TMDs) are of interest due to their unique optical and electronic characteristics in the single layer. In order to optimize the electrical properties of these materials, a method to overcome a substantial Schottky-barrier in these single layer materials must be utilized, while maintaining their 2D optical properties. One such method to do so is by creating contacts of multilayer TMD materials with a 2D channel. Such an architecture can be achieved via chemical vapor deposition (CVD) growth over lithographically-patterned substrates. My work investigates the growth of WSe2, a native p-type material, over patterned SiO2 of different arrangements as to tune the channel length between WSe2 monolayer islands. Using the substrate as a template removes the need for post-growth modification of the material, allowing for optimal preservation of the naturally grown film characteristics. These films are then characterized with a variety of optical techniques, such as Raman and photoluminescence spectroscopy, as well as electrical transport measurements.