Presentation Title

Determination and verification of resonance conditions for maximum power transfer during RF biasing of insulating materials for plasma material interaction studies

Faculty Mentor

Saikat Chakraborty Thakur

Start Date

18-11-2017 11:30 AM

End Date

18-11-2017 11:45 AM

Location

9-239

Session

Physical Sciences 4

Type of Presentation

Oral Talk

Subject Area

physical_mathematical_sciences

Abstract

Durability of metal oxides and nitrides when exposed to plasmas is crucial to determine if it is a viable enclosure material for high power helicon plasma sources with application to thermonuclear fusion. This can be tested by exposing a wafer of those materials to fusion relevant plasma conditions. However since these are insulating materials, they have to be biased by Radio Frequency (RF) voltages. A properly designed matching network is critical to ensure that the power is effectively transferred from an RF power source to the wafer exposed to plasma. Using an analytical solution for capacitive RF sheaths as a basis to simulate the plasma load for different testing conditions, we show that an L matching network is the best suited for maximum power transfer. We also experimentally determined the resonance curves of the transfer of power for some of the expected plasma conditions and ensured the maximum transfer of RF power to the wafer in actual experiments.

Summary of research results to be presented

Resonance curves for a comprehensive range of expected plasma conditions showing a significant increase in power transfer when using the designed matching network.

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Nov 18th, 11:30 AM Nov 18th, 11:45 AM

Determination and verification of resonance conditions for maximum power transfer during RF biasing of insulating materials for plasma material interaction studies

9-239

Durability of metal oxides and nitrides when exposed to plasmas is crucial to determine if it is a viable enclosure material for high power helicon plasma sources with application to thermonuclear fusion. This can be tested by exposing a wafer of those materials to fusion relevant plasma conditions. However since these are insulating materials, they have to be biased by Radio Frequency (RF) voltages. A properly designed matching network is critical to ensure that the power is effectively transferred from an RF power source to the wafer exposed to plasma. Using an analytical solution for capacitive RF sheaths as a basis to simulate the plasma load for different testing conditions, we show that an L matching network is the best suited for maximum power transfer. We also experimentally determined the resonance curves of the transfer of power for some of the expected plasma conditions and ensured the maximum transfer of RF power to the wafer in actual experiments.