Presentation Title

Topological Insulators: Surface Interactions of Bismuth Selenide Exposure to Iodine

Faculty Mentor

Jory Yarmoff

Start Date

23-11-2019 8:00 AM

End Date

23-11-2019 8:45 AM

Location

233

Session

poster 1

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

Topological insulators (TI) are materials with topological surface states (TSS) that provide a conductive surface, while the inherent mass remains insulating. Studying TI materials supports applications such as topological superconductors, filling defects in TI surfaces for quantum computers, and spintronic based devices. Bismuth Selenide [Bi2Se3] is a TI material that contains self-organized quintuple layers, and is naturally Selenium terminated. The overall goal of this experiment is to study how the Bi2Se3 TI surface is manipulated through exposure to Iodine as a function of the number of Se vacancy defects. Through the use of Ultra High Vacuum [UHV] surface preparation methods, we are able prepare and verify a well- ordered topological surface that is free of surface contaminants. Argon (Ar) ion bombardment is utilized to create vacancy defects in the outermost Selenium layer.

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Nov 23rd, 8:00 AM Nov 23rd, 8:45 AM

Topological Insulators: Surface Interactions of Bismuth Selenide Exposure to Iodine

233

Topological insulators (TI) are materials with topological surface states (TSS) that provide a conductive surface, while the inherent mass remains insulating. Studying TI materials supports applications such as topological superconductors, filling defects in TI surfaces for quantum computers, and spintronic based devices. Bismuth Selenide [Bi2Se3] is a TI material that contains self-organized quintuple layers, and is naturally Selenium terminated. The overall goal of this experiment is to study how the Bi2Se3 TI surface is manipulated through exposure to Iodine as a function of the number of Se vacancy defects. Through the use of Ultra High Vacuum [UHV] surface preparation methods, we are able prepare and verify a well- ordered topological surface that is free of surface contaminants. Argon (Ar) ion bombardment is utilized to create vacancy defects in the outermost Selenium layer.