Presentation Title

Measuring the Stability of a Silicon Single Electron Device Using Charge Offset Drift

Faculty Mentor

Justin K. Perron, Ph.D

Start Date

23-11-2019 8:00 AM

End Date

23-11-2019 8:45 AM

Location

267

Session

poster 1

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

The capabilities of single electron devices (SEDs) have potential applications in the field of quantum information science. Achieving such use requires the performance of devices to be stable over time. Research has shown stability is influenced by both geometry of the gate design as well as the device’s material composition. Charge offset drift provides one metric for determining stability by tracking the positions of measured current peaks over time. Here we investigate a silicon-based SED with a simple gate design and its charge offset drift. We compare our results with published data from other device designs to further our understanding of what influences charge offset stability.

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Nov 23rd, 8:00 AM Nov 23rd, 8:45 AM

Measuring the Stability of a Silicon Single Electron Device Using Charge Offset Drift

267

The capabilities of single electron devices (SEDs) have potential applications in the field of quantum information science. Achieving such use requires the performance of devices to be stable over time. Research has shown stability is influenced by both geometry of the gate design as well as the device’s material composition. Charge offset drift provides one metric for determining stability by tracking the positions of measured current peaks over time. Here we investigate a silicon-based SED with a simple gate design and its charge offset drift. We compare our results with published data from other device designs to further our understanding of what influences charge offset stability.