Presentation Title

Testing Tunable Silicon-Based Single Electron Devices: Double Quantum Dot Regime

Faculty Mentor

Justin K. Perron

Start Date

23-11-2019 8:45 AM

End Date

23-11-2019 9:30 AM

Location

210

Session

poster 2

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

Single electron devices (SEDs) are electronic devices capable of isolating individual electrons along a conducting path. This ability has many proposed applications including their use in quantum information science. Different applications require different operating regimes. Our goal was to investigate tunability of SEDs with a simple gate design. In this poster we analyze the ability to tune a silicon-based device to the double quantum dot regime. Silicon in particular is of interest due to its material properties such as zero-nuclear-spin isotopes and low spin-orbit coupling, leading to extremely long spin lifetimes.

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Nov 23rd, 8:45 AM Nov 23rd, 9:30 AM

Testing Tunable Silicon-Based Single Electron Devices: Double Quantum Dot Regime

210

Single electron devices (SEDs) are electronic devices capable of isolating individual electrons along a conducting path. This ability has many proposed applications including their use in quantum information science. Different applications require different operating regimes. Our goal was to investigate tunability of SEDs with a simple gate design. In this poster we analyze the ability to tune a silicon-based device to the double quantum dot regime. Silicon in particular is of interest due to its material properties such as zero-nuclear-spin isotopes and low spin-orbit coupling, leading to extremely long spin lifetimes.