Presentation Title

Proximity Induced Ferromagnetic Behavior in Bismuth Telluride/CGT Heterostructures

Faculty Mentor

Jing Shi

Start Date

23-11-2019 8:45 AM

End Date

23-11-2019 9:30 AM

Location

212

Session

poster 2

Type of Presentation

Poster

Subject Area

physical_mathematical_sciences

Abstract

Previous experiments have shown that ferromagnetic order persists down to the two-dimensional limit in the van der Waals ferromagnetic semi-conductor, Cr2Ge2Te6(CGT). CGT is a 2D ferromagnetic semiconductor which is conductive at room temperature but is very insulating at temperatures below its Curie temperature, TC ~ 61K, making it a great material to form 2D heterostructures with other van der Waals materials for electrical transport experiments as none of the current will flow in the CGT layer. In this experiment, we study the proximity induced magnetic order in the non-magnetic topological insulator, Bi2Te3, coupled to thin flakes of CGT through low temperature magneto-transport measurements. To accomplish this we fabricated heterostructures comprised of Boron Nitride, CGT, and 8 QL Bi2Te3. We were able to achieve these heterostructures through a simple transferring process. We found that Bi2Te3 acquires a small anomalous Hall effect signal when coupled to CGT flakes that are transferred to its surface. Also, its magnetoresistance(MR) changes slope after the magnetization of CGT is fully aligned with the applied field. I will present the results of MR and Hall effect measurements we obtained at varying temperatures below the Curie temperature. We see that this signal persists up to T ~ 60K which indicates the signal in the TI devices comes from the CGT layer.

Thank you to the National Science Foundation and MacREU for their grateful support.

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Nov 23rd, 8:45 AM Nov 23rd, 9:30 AM

Proximity Induced Ferromagnetic Behavior in Bismuth Telluride/CGT Heterostructures

212

Previous experiments have shown that ferromagnetic order persists down to the two-dimensional limit in the van der Waals ferromagnetic semi-conductor, Cr2Ge2Te6(CGT). CGT is a 2D ferromagnetic semiconductor which is conductive at room temperature but is very insulating at temperatures below its Curie temperature, TC ~ 61K, making it a great material to form 2D heterostructures with other van der Waals materials for electrical transport experiments as none of the current will flow in the CGT layer. In this experiment, we study the proximity induced magnetic order in the non-magnetic topological insulator, Bi2Te3, coupled to thin flakes of CGT through low temperature magneto-transport measurements. To accomplish this we fabricated heterostructures comprised of Boron Nitride, CGT, and 8 QL Bi2Te3. We were able to achieve these heterostructures through a simple transferring process. We found that Bi2Te3 acquires a small anomalous Hall effect signal when coupled to CGT flakes that are transferred to its surface. Also, its magnetoresistance(MR) changes slope after the magnetization of CGT is fully aligned with the applied field. I will present the results of MR and Hall effect measurements we obtained at varying temperatures below the Curie temperature. We see that this signal persists up to T ~ 60K which indicates the signal in the TI devices comes from the CGT layer.

Thank you to the National Science Foundation and MacREU for their grateful support.